DocumentCode
3293402
Title
Simultaneous regulation of film thickness, surface roughness and porosity in a multiscale thin film growth process
Author
Hu, Gangshi ; Zhang, Xinyu ; Orkoulas, Gerassimos ; Christofides, Panagiotis D.
Author_Institution
Dept. of Chem. & Biomol. Eng., Univ. of California, Los Angeles, CA, USA
fYear
2009
fDate
15-18 Dec. 2009
Firstpage
2387
Lastpage
2394
Abstract
This work focuses on simultaneous regulation of film thickness, surface roughness and porosity in a multiscale model of a thin film growth process using the inlet precursor concentration as the manipulated input. Specifically, a continuous macroscopic partial differential equation model is used to describe the dynamics of the gas phase. The thin film growth process is modeled via a microscopic kinetic Monte Carlo simulation model on a triangular lattice with vacancies and overhangs allowed to develop inside the film. Closed-form dynamic models of thin film surface profile and porosity are developed and used as the basis for the design of a model predictive control algorithm to simultaneously regulate film thickness, surface roughness and film porosity. Simulation results demonstrate the applicability and effectiveness of the proposed modeling and control approach by applying the proposed controller to the multiscale model.
Keywords
Monte Carlo methods; elemental semiconductors; partial differential equations; porosity; porous materials; semiconductor growth; semiconductor thin films; silicon; surface roughness; vacancies (crystal); Si; closed-form dynamic models; continuous macroscopic partial differential equation model; controller; film thickness; gas phase; inlet precursor concentration; microscopic kinetic Monte Carlo simulation model; multiscale thin film growth process; porosity; surface roughness; thin film surface profile; triangular lattice; vacancies; Algorithm design and analysis; Kinetic theory; Lattices; Microscopy; Partial differential equations; Predictive control; Predictive models; Rough surfaces; Surface roughness; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Decision and Control, 2009 held jointly with the 2009 28th Chinese Control Conference. CDC/CCC 2009. Proceedings of the 48th IEEE Conference on
Conference_Location
Shanghai
ISSN
0191-2216
Print_ISBN
978-1-4244-3871-6
Electronic_ISBN
0191-2216
Type
conf
DOI
10.1109/CDC.2009.5399542
Filename
5399542
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