A new fabrication method of silicon field emitter array with local oxidation of polysilicon and chemical-mechanical-polishing

Author

Lee, Jin Ho ; Kang, Sung Weon ; Kim, Sang Gi ; Song, Yoon-Ho ; Cho, Kyoung Ik ; Yoo, Hyung Joun

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

415

Lastpage

418

Abstract

In this paper, we describe the fabrication of single crystal silicon field emitter arrays. Emission tips have been fabricated by a novel method which uses chemical-mechanical-polishing (CMP) and local polysilicon oxidation for gate electrodes and gate dielectrics, respectively. By this method, we can shrink the radius of gate aperture without increasing gate leakage current, and get a clean cut edge of gate electrode. The anode emission current measured from the 1024 tips array was about 17 μA (16 nA/tip) at a gate voltage of 64 V

Keywords

electron field emission; elemental semiconductors; oxidation; polishing; semiconductor technology; silicon; vacuum microelectronics; 17 muA; 64 V; Si; Si field emitter array; chemical-mechanical-polishing; emission tips; fabrication method; gate dielectrics; gate electrodes; local oxidation; polysilicon; single crystal Si FEA; Anodes; Apertures; Chemicals; Dielectrics; Electrodes; Fabrication; Field emitter arrays; Leakage current; Oxidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601854

Filename

601854