• DocumentCode
    3294141
  • Title

    8-bit multiplier simulation experiments investigating the use of power supply transient signals for the detection of CMOS defects

  • Author

    Plusquellic, James F. ; Germida, Amy ; Yan, Zheng

  • Author_Institution
    Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
  • fYear
    1999
  • fDate
    36465
  • Firstpage
    68
  • Lastpage
    76
  • Abstract
    Transient Signal Analysis is a digital device testing method that is based on the analysis of voltage transients at multiple test points. In this paper the power supply transient signals from simulation experiments on an 8-bit multiplier are analyzed at multiple test points in both the time and frequency domain. Linear regression analysis is used to separate and identify the signal variations introduced by defects and the variations caused by changes in fabrication process parameters. Defects were introduced into the simulation model by adding material (shorts) or removing material (opens) from the layout. Process parameter fluctuations were modeled by randomly varying transistor and circuit parameters individually and in groups over the range of +/-25% of the nominal parameters. The results of the analysis show that it is possible to distinguish between defect-free devices with injected process variation and defective devices
  • Keywords
    CMOS digital integrated circuits; circuit simulation; fault simulation; frequency-domain analysis; integrated circuit modelling; integrated circuit testing; logic testing; multiplying circuits; semiconductor process modelling; statistical analysis; time-domain analysis; transient analysis; transients; 8 bit; 8-bit multiplier simulation experiments; CMOS defect detection; defect-free devices; defective devices; digital device testing method; fabrication process parameters; frequency domain; injected process variation; layout; linear regression analysis; multiple test points; opens; power supply transient signals; process parameter fluctuation modeling; randomly varying circuit parameters; randomly varying transistor parameters; shorts; signal variations; signature waveforms; simulation model; time domain; transient signal analysis; voltage transients; Analytical models; Fabrication; Frequency domain analysis; Linear regression; Power supplies; Signal analysis; Signal processing; Testing; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defect and Fault Tolerance in VLSI Systems, 1999. DFT '99. International Symposium on
  • Conference_Location
    Albuquerque, NM
  • ISSN
    1550-5774
  • Print_ISBN
    0-7695-0325-x
  • Type

    conf

  • DOI
    10.1109/DFTVS.1999.802871
  • Filename
    802871