DocumentCode
3294245
Title
A Novel methodology for dopant contrast enhancement in Si Doped Area
Author
Zhu, Zhu ; Tong, Jinyu ; Lung, Lai Li ; Li, Kite ; Chang, S.J.
Author_Institution
Failure Anal. Lab., Wuhan Xinxin Semicond. Manuf. Int. Corp. (WXIC), Wuhan, China
fYear
2009
fDate
6-10 July 2009
Firstpage
414
Lastpage
417
Abstract
As well known, it is quite difficult to obtain dopant related information by SEM due to weak built-in potentials especially in Si. In this paper, utilize doped poly to enhance dopant contrast (DC) and shows successfully DC in doped Si area, and the model is also proposed for phenomenon explanation.
Keywords
elemental semiconductors; scanning electron microscopy; semiconductor doping; silicon; SEM; Si:Jk; built-in potentials; dopant contrast enhancement; silicon doped area; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232620
Filename
5232620
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