Integrated ODP metrology as an APC enabler for complex high aspect ratio 3D deep trench device structures

The current technology node and the complexity of device design and processing demand metrology systems that can provide profile and underlying layer information in one measurement; and perform this task with high accuracy and precision. Additionally, manufacturability and yield management requirements increase the need for fast, reliable, non-destructive and economical measurements that allow for extensive wafer sampling plans. The work in this paper shows promise that integrated optical digital profilometry (iODP) is a fast, non-destructive metrology solution to address these aforementioned challenges. In the following discussion, we present results of a characterization experiment where ODP is employed to measure 3-dimensional (3D) DRAM device structures on the leading edge technology node at four different process steps, including high aspect ratio multi-layer deep trench layers.