A high-G silicon carbide vertical capacitive micromachined accelerometer

A micromachined acceleration sensor for high-g detection is presented, which introduces silicon carbide as a mechanical material. The sensor structure itself consists of a fixed capacitor and a changeable one whose top plate moves perpendicular to the chip surface. The external acceleration can be obtained by measuring the change of the capacitance. Conventional surface micro-machining technologies are enough for the fabrication of the sensor. A basic theoretical model is given out, which is then used to calculate the vital performance parameters of the sensor. The theoretical measuring range is about 0-110 kG. In addition, two theoretical results are compared with the simulation ones obtained by ANSYS.