Patterning of vertical thin film emitters in field emission arrays and their emission characteristics

Author

Karpov, L.D. ; Genelev, A.P. ; Drach, V.A. ; Zasemkov, V.S. ; Mirgorodski, Y.V. ; Tikhonski, A.N.

Author_Institution

SI Diamond Technol. Inc., Austin, TX, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

501

Lastpage

504

Abstract

The present paper concerns a new manufacturing process for emission structures with Vertical Thin Film Emitters (VTFE). Simple methods of directional vacuum deposition for different materials were employed in the above process. VTFE were fabricated via deposition of Cr, Ti layers on Cu posts with Cr caps, located on a substrate, followed by dissolution of Cu posts. Thus produced emission structures had VTFE density of 2.88×10⁶ emitters/cm². The height of VTFE ungated structures was ~5.5-5.8 μm. The extraction field of Ti VTFE structures was ~15-20 V/μm. The possibility to employ a foregoing process for gated structures with VTFE was demonstrated

Keywords

chromium; copper; dissolving; titanium; vacuum deposition; vacuum microelectronics; 5.5 to 5.8 micron; Ti-Cr-Cu; directional vacuum deposition; dissolution; emission characteristics; extraction field; field emission arrays; ungated structures; vertical thin film emitters; Chemical vapor deposition; Chromium; Dielectric substrates; Dielectric thin films; Fabrication; Field emitter arrays; Manufacturing processes; Resists; Shape; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601873

Filename

601873