Title :
Investigation of frequency dispersion effect in HfO2/SiO2 Gate Stack
Author :
Hongxia, Liu ; Qianwei, Kuang ; Suzhen, Luan ; Yue, Hao ; Aaron, Zhao ; Sai, Tallavarjula
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
The frequency dispersion effect of MOS capacitor with HfO2/SiO2 gate stack is investigated. An equivalent four-element circuit model is presented. Based on this model, frequency dispersion at high frequencies can be eliminated. Experimental results demonstrate the presented model can accurately measure C-V characteristics of MOS capacitor with HfO2/SiO2 gate stack.
Keywords :
MOS capacitors; capacitance; hafnium compounds; silicon compounds; C-V characteristics; HfO2-SiO2; MOS capacitor; four-element circuit model; frequency dispersion effect; gate stack; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Dielectric measurements; Dispersion; Equivalent circuits; Frequency; Hafnium oxide; High K dielectric materials; Leakage current;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232660
