• DocumentCode
    3295352
  • Title

    Can a MOSFET survive from multiple breakdowns?

  • Author

    Li, X. ; Tung, C.H. ; Pey, K.L.

  • Author_Institution
    Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    153
  • Lastpage
    157
  • Abstract
    How can a metal-oxide-semiconductor (MOS) transistor suffer from multiple dielectric breakdowns (BD) with severe structural damages (e.g., local melting and metal migration) remain functional? Our results show that the amorphization of Si in the vicinity of the BD forms an effective p-n diode which prevents terminal short from happening when reverse-biased.
  • Keywords
    MOSFET; semiconductor device breakdown; MOSFET; dielectric breakdowns; Electric breakdown; MOSFET circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232677
  • Filename
    5232677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3295352