Combined Method for Two-Dimensional Modeling of MOS-transistors Parameters

Author

Cherkaev, Aleksey S. ; Makarov, Evgeny A. ; Vorontsov, Yaroslav I. ; Kalinin, Sergey V.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

100

Lastpage

102

Abstract

New combined method for calibrating the parameters of 2D technological and electrophysical models of "software package for two-dimensional process and device simulation - MicroTec-3.02" was suggested in this paper. This calibrating is realized on basis of high-accuracy 1D doping profiles in the channel and source-drain areas of MOS-transistors which were calculated by "FACT" software package, as well as volt-ampere characteristics of researched devices, that were really measured.

Keywords

MOSFET; electronic engineering computing; semiconductor device models; software packages; FACT; MOS-transistors parameters; MicroTec-3.02 software package; two-dimensional modeling; Application software; Application specific integrated circuits; Boron; Circuit simulation; Doping profiles; Integrated circuit modeling; Integrated circuit packaging; Integrated circuit technology; Semiconductor process modeling; Software packages; Calibration; MOS-transistor; Modeling; TCAD; Technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292923

Filename

4292923