Title :
Alpha-particle-induced soft-error mechanism in semi-insulating GaAs substrate
Author :
Umemoto, Y. ; Matsunaga, N. ; Mitsusada, K.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model
Keywords :
III-V semiconductors; alpha-particle effects; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated circuit testing; GaAs; GaAs substrate; ICs; alpha-particle-induced soft error; bipolar mechanism; charge-collection model; model; n-i-n isolation structure; total collected charge; Capacitors; Computer errors; Electrons; Gallium arsenide; History; Laboratories; MESFETs; Predictive models; Silicon; Spontaneous emission;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23435
