Reliability behavior of TaAlOx Metal-Insulator-Metal capacitors

Author

Hota, M.K. ; Mahata, C. ; Bera, M.K. ; Mallik, S. ; Majhi, B. ; Das, T. ; Sarkar, C.K. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India

fYear

2009

fDate

6-10 July 2009

Firstpage

803

Lastpage

806

Abstract

Reliability characteristics of TaAlO_x high-k dielectric MIM capacitors are reported. TaAlO_x films have been deposited by RF co-sputtering of Ta₂O₅ and Al₂O₃ targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlO_x-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of ~ 4.2 - 5.4 MV/cm was found for TaAlO_x films.

Keywords

MIM devices; aluminium compounds; electric breakdown; high-k dielectric thin films; tantalum compounds; thin film capacitors; TaAlO_x; current 20 nA to 60 nA; dielectric breakdown voltage; high-k dielectric MIM capacitors; metal-insulator-metal capacitors; reliability behavior; voltage 3 V to 7 V; voltage coefficients of capacitance; Breakdown voltage; Capacitance; Carbon capture and storage; Degradation; Dielectric substrates; High-K gate dielectrics; Kinetic theory; MIM capacitors; Radio frequency; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232720

Filename

5232720