Investigation of instability in multi-layer dielectric structures

Author

Murakami, Shinsuke ; Kagami, T. ; Sugawara, Yoko

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1988

fDate

12-14 Apr 1988

Firstpage

139

Lastpage

144

Abstract

Stability of secondary passivation layers as RF plasma sputtered SiO₂ (Sp-SiO₂), P-SiO₂, and P-SiN in high-voltage integrated circuits under bias-temperature (BT) stress aging was investigated by using an MIS diode and a lateral pnpn thyristor. It was shown that the initial electrical properties were almost the same for each passivation layer system. However, variations in net number of charges by ±BT stress aging were observed owing to different charge storage mechanisms, such as residual charges, interface trapped charges, and polarized charges. These instabilities are discussed in conjunction with variations in the device blocking characteristics

Keywords

ageing; dielectric thin films; integrated circuit technology; passivation; silicon compounds; sputtered coatings; stability; MIS diode; RF plasma sputtering; SiN; SiO₂; bias temperature stress ageing; charge storage mechanisms; device blocking characteristics; electrical properties; high-voltage integrated circuits; instability; interface trapped charges; lateral pnpn thyristor; multi-layer dielectric structures; polarized charges; residual charges; secondary passivation layers; Aging; Circuit stability; Dielectrics; Diodes; Passivation; Plasma stability; Radio frequency; Radiofrequency integrated circuits; Stress; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23441

Filename

23441