DocumentCode
3296340
Title
Investigation on TSOP warpage mechanism and improvement method
Author
Wang, Lei ; Zhao, Zhenqing ; Wang, Jianhui ; Wen, Long ; Wang, Qian ; Lee, Jaisung
Author_Institution
Samsung Semicond. China R&D Co. Ltd., Suzhou, China
fYear
2009
fDate
6-10 July 2009
Firstpage
747
Lastpage
750
Abstract
This paper gives a detailed investigation on TSOP warpage mechanism. The influences of all the factors on warpage behavior, including materials (EMC ingredient and lead frame), lead frame design and assembly process, were investigated through numerical simulation and experimental study. The simulation result showed that low CTE material is a good choice for warpage reduction. And it also indicated that by properly modifying the lead frame design, the warpage performance can be improved. Much attention was paid to the curing process as this thermal process would obviously affect the stress formation and release in the package. It was deduced that a reduction in the cooling rate above Tg during cure would reduce warpage based on theoretical thermal analysis, and the experiment result proved it did work. Finally a modification to the cure process is proposed as the most cost effective and practicable solution in actual production.
Keywords
curing; integrated circuit packaging; moulding; shrinkage; TSOP warpage mechanism; epoxy molding compound; lead frame design; thin small outline package; warpage performance; warpage reduction; Assembly; Cooling; Costs; Curing; Electromagnetic compatibility; Numerical simulation; Packaging; Process design; Production; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232732
Filename
5232732
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