Low voltage low power CMOS inductorless RF bandpass filter with high image rejection capability

Author

Thanachayanont, Apinunt

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

3

fYear

2002

fDate

4-7 Aug. 2002

Abstract

A new design approach suitable for realising low-power low-voltage high-order RF bandpass filter is proposed. Using a low-voltage VHF CMOS active inductor based on the exploitation of the intrinsic device capacitance, a compact tuneable 2nd-order RF bandpass filter is realised by adding a series capacitor to the input port of the inductor. The proposed 2nd-order filter can be readily cascaded to realise a high-order filter with enhanced image rejection ability. High-Q second-, fourth- and sixth-order fully differential filters are realised in a 0.35 μm CMOS process, and HSPICE simulations show that the filters can operate at the 2.4 GHz ISM frequency band under a 2 V power supply voltage with about 1 mW power dissipation per pole.

Keywords

CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; band-pass filters; biquadratic filters; circuit tuning; low-power electronics; 0.35 micron; 1 mW; 2 V; 2.4 GHz; CMOS inductorless RF bandpass filter; Q-enhanced fully differential implementation; RFIC; VHF CMOS active inductor; biquadratic bandpass transfer function; differential filters; high image rejection capability; high-order bandpass filter; image rejection ability; low-power RF filter; low-voltage RF filter; Active inductors; Band pass filters; Capacitors; Low voltage; Power dissipation; Power supplies; Q factor; Radio frequency; Transconductance; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on

Print_ISBN

0-7803-7523-8

Type

conf

DOI

10.1109/MWSCAS.2002.1187095

Filename

1187095