Title :
A circuit model for a vertical vacuum microelectronic triode at high frequency
Author :
Ming Chin ; Huang, Qing-An ; Wei, Tong-Li
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
A circuit model of the conventional vacuum field emission triode amplifier is developed in this paper. The parameters of components in this model are calculated or estimated. Depending on Y parameters, the power gain and the cut off frequency of this device are calculated. The result shows that the cut off frequency is proportional to the gain of device gm and inversely proportional to grid-cathode capacitance Cgc and grid-anode capacitance Cga. Compared to the experimental result, the result in this paper is in accord with the experiment
Keywords :
capacitance; electron field emission; equivalent circuits; modelling; triodes; vacuum microelectronics; Y parameters; circuit model; cutoff frequency; grid-anode capacitance; grid-cathode capacitance; high frequency region; power gain; vacuum field emission triode amplifier; vertical vacuum microelectronic triode; Anodes; Cathodes; Equivalent circuits; Frequency; Microelectronics; Microwave devices; Microwave technology; Parasitic capacitance; Silicon; Substrates;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601894
