Title :
Intermodulation characteristics of UHV/CVD SiGe HBTs
Author :
Niu, Guofu ; Cressler, John D. ; Ansley, William E. ; Webster, Charles S. ; Anna, Raghunadha B. ; King, Nathaniel
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
Extensive SPICE circuit simulations were performed to explore the physics underlying the unusually high linearity (15 dBc OIP3/PDC ) observed in SiGe HBT´s. The EB and CB depletion capacitances were found to be the major contributors to the observed high linearity. Both the absolute value and the bias dependence of the depletion capacitances contribute to nonlinearity, while the diffusion capacitance has negligible impact
Keywords :
Ge-Si alloys; SPICE; capacitance; heterojunction bipolar transistors; intermodulation; semiconductor device measurement; semiconductor device models; semiconductor materials; CB depletion capacitance; EB depletion capacitance; SPICE circuit simulations; UHV/CVD SiGe HBTs; bias dependence; diffusion capacitance; high linearity; intermodulation characteristics; Capacitance; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microelectronics; Power generation; SPICE; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803523
