Title :
A 5.1-5.8 GHz low-power image-reject downconverter in SiGe technology
Author :
Long, John R. ; Hadaway, Robert A. ; Harame, David L.
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
A 5.1-5.8 GHz downconverter realizes over 36 dB of image rejection while dissipating 24 mW from a 0.9 V supply, or 18.5 mW at 1.8 V. Conversion gain is 14 dB, IIP3=-5.5 dBm and SSB noise figure (50Ω) is 6.8 dB at 0.9 V. The circuit is realized in a 0.5 μm SiGe bipolar technology
Keywords :
Ge-Si alloys; MMIC frequency convertors; bipolar MMIC; integrated circuit noise; semiconductor materials; 0.5 micron; 0.9 V; 1.8 V; 14 dB; 18.5 mW; 24 mW; 5.1 to 5.8 GHz; 6.8 dB; SSB noise figure; SiGe; bipolar technology; conversion gain; image rejection; low-power image-reject downconverter; Circuit topology; Costs; Filters; Germanium silicon alloys; Image converters; Mixers; Preamplifiers; Radio frequency; Receivers; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803528
