DocumentCode
3299755
Title
Improved extraction of base and emitter resistance from small signal high frequency admittance measurements
Author
Kloosterman, W.J. ; Paasschens, J.C.J. ; Klaassen, D.B.M.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1999
fDate
1999
Firstpage
93
Lastpage
96
Abstract
The base- and emitter resistance are important parameters of bipolar transistors and can be extracted from high frequency small signal admittance (Y) parameters. The circle impedance method and the two port method are examined and improvements are presented
Keywords
bipolar transistors; electric admittance measurement; electric resistance measurement; equivalent circuits; semiconductor device measurement; semiconductor device models; Y-parameters; base resistance extraction; bipolar transistors; circle impedance method; emitter resistance extraction; high frequency admittance measurements; small signal HF admittance measurements; two port method; Admittance measurement; Bipolar transistors; Capacitance; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency; Impedance measurement; Laboratories; Noise measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location
Minneapolis, MN
ISSN
1088-5714-0
Print_ISBN
0-7803-5712-4
Type
conf
DOI
10.1109/BIPOL.1999.803534
Filename
803534
Link To Document