• DocumentCode
    3299904
  • Title

    A novel high-performance lateral BJT on SOI with metal-backed single-silicon external base for low-power/low-cost RF applications

  • Author

    Yamada, T. ; Nii, H. ; Inoh, K. ; Shino, T. ; Kawanaka, S. ; Minami, Y. ; Fuse, T. ; Yoshimi, M. ; Katsumata, Y. ; Watanabe, S. ; Matsunaga, J. ; Ishiuchi, H.

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    A novel device structure to realize high-performance SOI lateral BJTs is presented. A metal-backed single-silicon external base electrode and a simple SOI structure achieve low base resistance and low parasitic capacitances, respectively. Due to the minimal parasitics, the device exhibited an fmax of 62 GHz with a low power dissipation per emitter area of 0.55 mW/μm2
  • Keywords
    UHF bipolar transistors; capacitance; microwave bipolar transistors; silicon-on-insulator; 62 GHz; SOI lateral BJTs; Si; high-performance lateral BJT; low base resistance; low parasitic capacitance; low-cost RF applications; low-power RF applications; metal-backed single-Si external base; Contact resistance; Electrodes; Etching; Fuses; Implants; Ink; Laboratories; Large scale integration; Parasitic capacitance; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803542
  • Filename
    803542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299904