Title :
Analysis of GE content in SiGe waveguide
Author :
Song Feng ; Yong Gao ; Lian-bi Li
Author_Institution :
Dept. of Electron. Eng., Xi´an Univ. of Technol., Xi´an, China
Abstract :
Silicon germanium (SiGe) is a completely miscible alloy with a lattice mismatch to the Si substrateof up to 4.17%, which has a lot of advantages, such as high refractive index, large electron mobility, compatibility with Si integrated circuit process, and so on. Based on the already established hundred nano-structure of SiGe ridge waveguide, effects of Ge content on effective refractive index and coupling efficiency characteristics are analyzed. Focus on the different losses in SiGe waveguide is analyzed. Through the optimization of Ge content, SiGe-OI optical waveguide has excellent losses characteristics at low Ge content.
Keywords :
Ge-Si alloys; electron mobility; integrated optics; optical design techniques; optical waveguides; refractive index; ridge waveguides; silicon-on-insulator; Si; SiGe; coupling efficiency; electron mobility; lattice mismatch; optical waveguides; refractive index; ridge waveguide; Optical fibers; Optical losses; Optical refraction; Optical scattering; Optical variables control; Silicon germanium; Ge content; Losses; Optical devices; SiGe waveguide;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617246
