• DocumentCode
    3300564
  • Title

    The role of pulse time Toff on porous silicon as template for Au nanoparticles by using integrated electrochemical technique

  • Author

    Amran, T.S.T. ; Hashim, M.R. ; Ali, N.K. ; Yazid, H. ; Adnan, R.

  • Author_Institution
    Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia
  • fYear
    2012
  • fDate
    5-7 Jan. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we present technique known for its simplicity and low processing cost for the synthesis of novel nanostructure of various metals by means filling pores of porous silicon (PSi) with Au nanoparticles (AuNPs) via electrochemical deposition (ECD) method. PSi was prepared using pulsed anodic etching technique by using duration time,Tau 14 ms with varying pulse time, Toff at 2ms, 4ms and 6 ms at constant current density 10mA/cm2 for 30 minutes. In addition a sample that was etched with direct current (DC) method at constant current density at 10 mA/cm2 also prepared for comparison. After that, PSi was used as template for electrochemical deposition for AuNPs. The electrolyte for ECD was prepared by using AuNPs powder that was digested with aqua regia and diluted with deionized water using magnetic stirrer at 20°C for 15 minutes. Then, the deposition process was done using direct current at 1.5 mA/cm2 for lhour. Subsequently, the deposited samples underwent annealing process at 350° for 15 minutes to refine the structure by making it homogeneous. The porous structure has been confirmed by scanning electron microscopy (SEM). The energy-dispersive X-ray spectroscopy (EDX) pattern confirmed the existence of AuNPs formation with different sizes. We studied the photoluminescence (PL) properties of the PSi structure and the PL signal after gold deposition.
  • Keywords
    X-ray chemical analysis; annealing; current density; electrodeposition; elemental semiconductors; etching; fine structure; gold; nanofabrication; nanoparticles; porous semiconductors; scanning electron microscopy; semiconductor-metal boundaries; silicon; Au-Si; EDX; SEM; annealing; aqua regia digestion; current density; deionized water; dilution process; direct current method; electrochemical deposition; energy-dispersive X-ray spectroscopy; gold deposition; homogeneous structure; integrated electrochemical technique; magnetic stirrer; nanoparticles; nanostructure synthesis; photoluminescence properties; pore filling; porous silicon; porous structure; powder structure; pulse time role; pulsed anodic etching technique; scanning electron microscopy; structure refinement; temperature 20 degC; temperature 350 degC; time 2 ms to 1 hour; Etching; Gold; Nanoparticles; Silicon; Spontaneous emission; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4577-0799-5
  • Type

    conf

  • DOI
    10.1109/ESciNano.2012.6149668
  • Filename
    6149668