Study on the influence of oxygen/argon flow ratio toward the growth of TiO2 film in reactive magnetron sputtering plasma

Titanium dioxide (TiO₂) material has attracted much attention due to its high refractive index, high transparency in the visible and near - infrared wavelength region, a high dielectric constant and very good wear resistance and chemical stability. Such properties have led homogenous TiO₂ thin film layer to be used widely in optical coating, photovoltaic, sensor and electronics applications. Reactive magnetron sputtering is one of most reliable and sophisticated technique to fabricate TiO₂ thin film. This technique offers a strict controlled deposition process to growth high quality TiO₂ thin film at varies parameter value. This includes parameter change in discharge power, working pressure, type of sputter target, composition ambient and reactive gas ratio, substrate temperature and others [1].