Title :
Structural and optical properties of ZnO thin film prepared by oxidation of Zn metal powders
Author :
Hassan, N.K. ; Hashim, M.R.
Author_Institution :
Nano-Optoelectron. Res. Lab., Univ. Sains Malaysia, Minden, Malaysia
Abstract :
The zinc oxide(ZnO), wide direct band-gap (3.37 eV), is a promising material for short wavelength optoelectronic devices, especially for ultraviolet (UV) light-emitting diodes (LEDs) and laser diodes (LDs), due to its large exciton binding energy of 60 meV [1-4]. For device applications, such as high efficiency UV light emitting devices, it is important to suppress the visible emission.
Keywords :
II-VI semiconductors; binding energy; oxidation; photoluminescence; semiconductor growth; semiconductor thin films; vacuum deposition; wide band gap semiconductors; zinc compounds; ZnO; large exciton binding energy; laser diode; metal powders; optical properties; optoelectronic device; oxidation; structural properties; thin film; ultraviolet light-emitting diode; visible emission; Green products; Light emitting diodes; Nanotechnology; Oxidation; X-ray scattering; Zinc oxide;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4577-0799-5
DOI :
10.1109/ESciNano.2012.6149685
