DocumentCode :
3300990
Title :
Effects of annealing time on the electrical properties of Y2O3 gate on silicon
Author :
Quah, Hock Jin ; Cheong, Kuan Yew
Author_Institution :
Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia
fYear :
2012
fDate :
5-7 Jan. 2012
Firstpage :
1
Lastpage :
2
Abstract :
In this work, the effects of annealing time (15, 30 [11], 45 minutes) on the MOS characteristics of RF magnetron sputtered Y203 gate oxide on Si substrate have been studied.
Keywords :
MIS devices; annealing; conduction bands; sputter deposition; thin films; yttrium compounds; MOS characteristics; RF magnetron sputtered gate oxide; Si; Y2O3; annealing time effects; electrical properties; silicon substrate; time 15 min; time 30 min; time 45 min; Annealing; Films; High K dielectric materials; Logic gates; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4577-0799-5
Type :
conf
DOI :
10.1109/ESciNano.2012.6149686
Filename :
6149686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3300990
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