Study of Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism

Author

Hamidinezhad, Habib ; Wahab, Yussof ; Othaman, Zulkafli

Author_Institution

Ibnu Sina Inst. for Fundamental Sci. Studies (IIS), UTM, Skudai, Malaysia

fYear

2012

fDate

5-7 Jan. 2012

Firstpage

1

Lastpage

2

Abstract

One-dimensional nanostructures have attracted extensive interest due to their potential uses in nanoelectronic and optoelectronic devices and fundamental importance for the study of size-dependent chemical and physical phenomena [1-3]. Silicon nanowires (SiNWs) were synthesized from pure silane gas as precursor and Au catalyst at a low temperature of 400°C. The SiNWs were grown on Si (111) substrates using very high-frequency plasma enhanced chemical vapor deposition via a vapor-liquid-solid mechanism.

Keywords

catalysis; elemental semiconductors; nanofabrication; nanowires; plasma CVD; semiconductor growth; silicon; Si; Si (111) substrates; catalysis; high frequency plasma enhanced chemical vapor deposition; nanoelectronic devices; nanowires; one-dimensional nanostructures; optoelectronic devices; pure silane gas; temperature 400 degC; vapor-liquid-solid mechanism; Chemical vapor deposition; Gold; Microscopy; Nanowires; Plasma temperature; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4577-0799-5

Type

conf

DOI

10.1109/ESciNano.2012.6149691

Filename

6149691