InGaN-based multi-quantum well blue-violet light emitting diode

The InGaN-based multi-quantum well (MQW) blue-violet LED grown by metal organic chemical vapor deposition (MOCVD) was studied.The LED structure was grown on Si (111) substrate with AlN buffer layer, followed by 40 pairs of AIN/GaN intermediate layer with respective thickness of 5 nm and 20 nm. Subsequently, a 600 nm thick AlGaN/GaN strained-layer superlattices (SLSs) cladding underlayer was grown which consist of 120 pairs SLSs. Then, 60 nm GaN waveguide, 2.0 nm InGaN MQW active layer, 30 nm InGaN over layer and 10 nm GaN were deposited subsequently. Light emission characteristics from photoluminescence (PL) analysis show emission wavelength with main peak at 423 nm and intensity of 2725 x 103 a.u.