DocumentCode
3301274
Title
FIB sample preparation for TEM failure analysis of advanced devices
Author
Zhu, J. ; Wang, Q.X. ; Chen, C.Q. ; Neo, S.P. ; Du, A.Y. ; Hua, Y.N.
Author_Institution
Dept. of QRA, Global Foundries Singapore, Singapore, Singapore
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
5
Abstract
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which are difficult for the conventional FIB methods.
Keywords
coatings; failure analysis; focused ion beam technology; photoresists; transistors; transmission electron microscopy; FIB sample preparation; TEM failure analysis; coating method; dual-direction TEM analysis; focused ion beam; photoresists; planar-cross section; transistor size; Coatings; Electronics industry; Failure analysis; Foundries; Ion beams; Lithography; Resists; Semiconductor materials; Transistors; Wood industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5532303
Filename
5532303
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