A >25% PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFET technology

Author

Krishnamurthy, K. ; Rodwell, M.J.W. ; Long, S.I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

81

Lastpage

84

Abstract

We report 0.2-6 GHz MMIC power amplifiers with 12 dB gain, over 23 dBm output power and more than 25% power-added-efficiency in a GaAs MESFET technology offering 18 GHz f/sub /spl tau// and 12 V breakdown. These circuits have pain-bandwidth products of /spl sim/1.3 f/sub /spl tau// and are more efficient than distributed power amplifiers. These circuit topologies are being used in GaN based broad-band high power amplifiers in development.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit design; lumped parameter networks; wideband amplifiers; 0.2 to 6 GHz; 12 V; 12 dB; 18 GHz; 25 percent; 5.8 GHz; GaAs; GaAs MESFET technology; MMIC power amplifiers; broadband power amplifiers; lumped power amplifier; Circuit topology; Distributed amplifiers; Electric breakdown; Gain; Gallium arsenide; Gallium nitride; MESFETs; MMICs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803732

Filename

803732