DocumentCode
3301397
Title
Millimeter-wave monolithic GaAs IC interconnect and packaging technology trends in Japan
Author
Ohata, K.
Author_Institution
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
105
Lastpage
108
Abstract
This paper presents an overview of recent technology trends of millimeter-wave MMIC interconnect and packaging in Japan in the aspects of low cost and high productivity. Ceramic-base packages up to W-band, flip-chip bonding and packaging for low cost and high productivity assembling, and 3D MCM technology for low cost and high functionality, have been developed.
Keywords
III-V semiconductors; MIMIC; ceramic packaging; flip-chip devices; gallium arsenide; integrated circuit interconnections; integrated circuit packaging; microassembling; multichip modules; 3D MCM technology; EHF; GaAs; GaAs MIMICs; IC interconnect technology; IC packaging technology; Japan; MM-wave monolithic ICs; W-band; ceramic-base packages; flip-chip bonding; high productivity assembling; low cost assembly; Bonding; Cost function; Electromagnetic coupling; Electronics packaging; Gallium arsenide; MMICs; Millimeter wave communication; Millimeter wave technology; Monolithic integrated circuits; Productivity;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803737
Filename
803737
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