DocumentCode
3301427
Title
A 180-GHz MMIC sub-harmonic mixer based on InGaAs/InAlAs/InP HEMT diodes
Author
Yon-Lin Kok ; Huei Wang ; Lai, R. ; Barsky, M. ; Sholley, M. ; Allen, B.
Author_Institution
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
113
Lastpage
115
Abstract
A monolithic sub-harmonic mixer is designed for RF frequencies at 180 GHz. It is fabricated on a 2-mil thick InP substrate using 0.08-/spl mu/m pseudomorphic InAlAs/InGaAs HEMT process. In-fixture measurements from 175 to 182 GHz with a sub-harmonic LO drive of 13 dBm at 96 GHz show a conversion loss of 15 dB. This is the first demonstration of a monolithic HEMT diode sub-harmonic mixer working in the RF band of 180 GHz.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave diodes; millimetre wave mixers; 0.08 micron; 15 dB; 175 to 182 GHz; 180 GHz; 2 mil; 96 GHz; EHF; HEMT diodes; InGaAs-InAlAs-InP; InP; InP substrate; MM-wave mixer; MMIC sub-harmonic mixer; PHEMT diode mixer; monolithic sub-harmonic mixer; pseudomorphic HEMT process; Diodes; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Loss measurement; MMICs; Mixers; Power harmonic filters; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803739
Filename
803739
Link To Document