Germanium nanostructure on Si(100) surface grown by RF Magnetron Sputtering technique

Author

Samavati, A.R. ; Ghoshal, S.K. ; Othaman, Z. ; Afroozeh, A.

Author_Institution

Ibn Sina Inst. for Fundamental Sci. Studies, Univ. Teknol. Malaysia, Skudai, Malaysia

fYear

2012

fDate

5-7 Jan. 2012

Firstpage

1

Lastpage

2

Abstract

Germanium (Ge) and Silicon nanostructure (NS) among many others semiconductor nanosystems received special attention due to the possibility in optoelectronics application [1]. The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. However, controlling the light emitting behavior require careful fabrication of such nanostructure. This research is targeted to fulfill this perspective by providing an efficient and easy fabrication method using sputtering.

Keywords

elemental semiconductors; germanium; luminescence; nanofabrication; nanoparticles; semiconductor growth; sputter deposition; Ge; RF magnetron sputtering technique; Si; Si(100) surface; germanium nanostructure; light emitting behavior; nanocrystallites; optoelectronics application; semiconductor nanosystems; silicon nanostructure; tuning band gap; visible luminescence; Annealing; Fabrication; Radio frequency; Silicon; Sputtering; Substrates; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2012 International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4577-0799-5

Type

conf

DOI

10.1109/ESciNano.2012.6149709

Filename

6149709