Title :
High efficiency monolithic InP HEMT V-band power amplifier
Author :
Liu, S.M.J. ; Tang, O.S.A. ; Kong, W. ; Nichols, K. ; Heaton, J. ; Chao, P.C.
Author_Institution :
Lockheed Martin Co., Nashua, NH, USA
Abstract :
This paper reports our development of a monolithic InP HEMT based power amplifier showing state-of-the-art V-band performance. A single-stage amplifier with a 600 um cell periphery demonstrated 224 mW of output power at the peak power-added efficiency of 43% with 7.5 dB power gain at 60 GHz. To the best of our knowledge, this is the best combination of output power and efficiency reported to date at this frequency for a solid state amplifier.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; indium compounds; integrated circuit design; millimetre wave power amplifiers; 224 mW; 43 percent; 60 GHz; 7.5 dB; EHF; InP; InP HEMT power amplifier; MM-wave power amplifier; V-band power amplifier; high efficiency monolithic amplifier; single-stage amplifier; solid state amplifier; Broadband amplifiers; Gain; Gallium arsenide; HEMTs; High power amplifiers; Indium phosphide; MMICs; Power amplifiers; Power generation; Testing;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803746
