• DocumentCode
    3301591
  • Title

    Novel low-cost process for 0.1-/spl mu/m T-shaped gate of InGaP/InGaAs pseudomorphic HEMT

  • Author

    Sugiura, M. ; Morizuka, K.

  • Author_Institution
    Toshiba Corporation
  • fYear
    1999
  • fDate
    17-20 Oct. 1999
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    T-gate HEMTs with deep submicron gate length are indispensable for realizing microwave and millimeter wave systems because of their superior performance in high-frequency operation and low noise characteristics [l]. In addition to high performance, recent growth in wireless applications such as broadband wireless communications and automotive radar systems have imposed strong cost reduction measures on these devices.
  • Keywords
    Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Numerical analysis; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs IC Symposium, 1999. 21st Annual
  • Conference_Location
    Monterey, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-5585-7
  • Type

    conf

  • DOI
    10.1109/GAAS.1999.803749
  • Filename
    803749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3301591