40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments

Author

Godin, J. ; Andre, P. ; Benchimol, J.L. ; Berdaguer, P. ; Blayac, S. ; Burie, J.R. ; Desrousseaux, P. ; Duchenois, A.M. ; Kauffmann, N. ; Konczykowska, A. ; Riet, M.

Author_Institution

Groupement d´Interet Econ, OPTO, Marcoussis, France

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

185

Lastpage

188

Abstract

To address the needs for very high speed electronic circuits for high bit-rate optical communications, we have developed an InP DHBT self-aligned process with f/sub T/ and f/sub MAX/ of 130 and 150 GHz; 40 Gb/s circuits, such as a 2:1 and 4:1 multiplexer and a 2:1 MUX-driver have been fabricated, characterized and assessed in system experiments.

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; multiplexing equipment; optical fibre communication; 130 GHz; 150 GHz; 40 Gbit/s; DHBT technology; III-V semiconductors; InP; MUX-driver; OEIC; high bit-rate optical communications; multiplexer; optical communications; optical fibre links; self-aligned process; system experiments; Circuits and systems; Communications technology; DH-HEMTs; Electrodes; Fabrication; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Wavelength division multiplexing; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803754

Filename

803754