DocumentCode
3301803
Title
1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates
Author
Yoshimi, S. ; Wada, N. ; Shao, C.L. ; Iwabu, K. ; Sakai, S.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokushima Univ., Japan
fYear
1991
fDate
8-11 Dec. 1991
Firstpage
962
Lastpage
963
Abstract
An AlGaAs/GaAs light emitting diode (LED) fabricated on Si substrate operated for more than 1000 h at room temperature without any significant degradation. An UCGAS (undercut GaAs on Si) structure has been used in the LED structure to reduce both the thermal stress and the dislocation density. An UCGAS LED does not show any significant degradation even after 1000 h of operation, while mesa-LED degrades quickly. This result demonstrates that reliable AlGaAs/GaAs light emitting devices can be fabricated on Si substrates.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; reliability; silicon; 1000 hr; AlGaAs-GaAs-Si; Si substrates; UCGAS LED; dislocation density; light emitting diodes; reliable LEDs; room temperature; thermal stress; undercut GaAs on Si; Contacts; Gallium arsenide; Light emitting diodes; MOCVD; Photoluminescence; Power generation; Temperature; Textiles; Thermal degradation; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0243-5
Type
conf
DOI
10.1109/IEDM.1991.235265
Filename
235265
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