Injection-locked oscillator as frequency multiplier for millimeter-wave applications

Author

The Linh Nguyen

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

245

Lastpage

248

Abstract

This paper describes the design of an injection-locked oscillator and demonstrates its use as a compact and efficient doubler or a tripler. The ILO has a free-running oscillating frequency of 28.5 GHz and output power of 7 dBm. With second subharmonic injection of 11 dBm, it produces >7 dBm from 26.5 GHz to 33.5 GHz with a maximum of 10 dBm at 30.5 GHz. With third subharmonic injection of 11 dBm, it produces >1 dBm from 28.5 GHz to 32 GHz with a maximum of 4 dBm at 30 GHz. The tripled output at 30 GHz has a spot noise of -102 dBc/Hz at 100 kHz offset. The MMIC was fabricated utilizing Nortel Networks´ GaAs/InGaP HBT with ft of 70 GHz and fmax of 110 GHz.

Keywords

III-V semiconductors; MMIC frequency convertors; MMIC oscillators; bipolar MIMIC; frequency multipliers; gallium arsenide; indium compounds; injection locked oscillators; millimetre wave frequency convertors; millimetre wave oscillators; 110 GHz; 26.5 to 33.5 GHz; 28.5 GHz; 70 GHz; GaAs-InGaP; HBT; III-V semiconductors; free-running oscillating frequency; frequency multiplier; injection-locked oscillator; millimeter-wave applications; output power; second subharmonic injection; spot noise; tripled output; Bandwidth; Frequency conversion; Heterojunction bipolar transistors; Injection-locked oscillators; MMICs; Millimeter wave technology; Millimeter wave transistors; Phase noise; Power generation; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 1999. 21st Annual

Conference_Location

Monterey, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5585-7

Type

conf

DOI

10.1109/GAAS.1999.803768

Filename

803768