A DC to 20 GHz high gain monolithic InP/InGaAs HBT feedback amplifier

Author

Montgomery, R.K. ; Humphrey, D.A. ; Smith, P.R. ; Jalali, B. ; Nottenburg, R.N. ; Hamm, R.A. ; Panish, M.P.

Author_Institution

AT&T Bell Labs, Murray Hill, NJ, USA

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

935

Lastpage

938

Abstract

The authors have realized a high-gain, broadband, bipolar feedback amplifier exhibiting an average flatband gain of 30 dB with 6.5-dB/sub p-p/ ripple and a -3-dB bandwidth of 20 GHz. Using InP/InGaAs heterostructure bipolar transistors (HBTs), a gain-bandwidth product of more than 600 GHz was demonstrated for a nondistributed monolithic integrated circuit for the first time. This two-stage transadmittance-transimpedance design has a chip-size of 975 mu m*675 mu m and dissipates 280 mW for a 3-V supply. The input return loss and reverse transmission to 9 GHz were -30 dB and -40 dB, respectively.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; indium compounds; linear integrated circuits; microwave amplifiers; wideband amplifiers; -30 dB; 0 to 20 GHz; 20 GHz; 280 mW; 3 V; 30 dB; HBT; InP-InGaAs; MMIC; bipolar feedback amplifier; broadband; heterostructure bipolar transistors; high gain; nondistributed monolithic integrated circuit; two-stage transadmittance-transimpedance design; Bandwidth; Bipolar transistors; Broadband amplifiers; Coupling circuits; Cutoff frequency; Feedback amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235272

Filename

235272