DocumentCode
3301940
Title
Alternately zero voltage switched forward, flyback multi resonant converter topology
Author
Kim, Chang-Sun ; Oh, Won-Seok ; Kim, Hee-Jun
Author_Institution
Dept. of Electr. Eng., Mokpo Nat. Univ., South Korea
Volume
1
fYear
2002
fDate
5-8 Nov. 2002
Firstpage
300
Abstract
The high efficiency multi-resonant converter is capable of operating at a high frequency with high power density [W/inch3]. However, the resonant voltage stress of 4∼5 times the input voltage increases the conduction losses because of on-resistance of a MOSFET. In this paper, the alternatively zero voltage switched forward multi resonant converter topologies are suggested to solve these problems. Comparing to the input voltage, it is about 2∼3 times the input voltage. Two multi resonant switches are turned on at the zero voltage and can be controlled more easily. Especially, the operational characteristics and the transient response are considered for alternated forward ZVS MRC. The operational principle of the resonant converter was verified through the experimental converter with 48 V input voltage, 5 V/50 W output voltage/power and PSpice simulation. The measured maximum voltage stress is 170 V of 2.9 times the input voltage and the maximum efficiency is measured up to 81.66%. The stabilization is achieved from the experimentally measured results of phase margin and gain margin of loop gain.
Keywords
DC-DC power convertors; SPICE; electric resistance; losses; power MOSFET; resonant power convertors; stability; switching convertors; transient response; 170 V; 48 V; 5 V; 50 W; 81.66 percent; MOSFET; PSpice simulation; alternately zero voltage switched converter; conduction losses; forward flyback multi resonant converter topology; gain margin; high efficiency multi-resonant converter; high frequency; high power density; input voltage; loop gain; maximum efficiency measurement; measured maximum voltage stress; multi resonant switches; on-resistance; operational characteristics; operational principle; output voltage/power; phase margin; resonant voltage stress; stabilization; transient response; zero voltage; Frequency conversion; MOSFET circuits; Resonance; Stress measurement; Switches; Switching converters; Topology; Transient response; Voltage control; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]
Print_ISBN
0-7803-7474-6
Type
conf
DOI
10.1109/IECON.2002.1187525
Filename
1187525
Link To Document