DocumentCode
3301948
Title
A lateral P-SI-N diode SPDT switch for Ka-band applications
Author
Tanabe, M. ; Iwanaga, J.S. ; Ishii, M. ; Miyatsuji, K. ; Ota, Y. ; Ueda, D.
Author_Institution
Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan
fYear
1999
fDate
17-20 Oct. 1999
Firstpage
263
Lastpage
266
Abstract
We report on lateral GaAs P-Semi-Insulator-N (P-SI-N) diode switches. The single P-SI-N structure showed an insertion loss of as low as 0.66 dB and the implemented SPDT switch comprised of the diodes exhibited an insertion loss of as low as 1.8 dB and isolation of 35 dB at 30 GHz. The proposed P-SI-N structure was easily formed by an ion-implantation technique and makes it possible to integrate with any active devices.
Keywords
III-V semiconductors; MIMIC; MMIC; gallium arsenide; ion implantation; microwave diodes; microwave switches; millimetre wave diodes; p-i-n diodes; semiconductor switches; 0.66 dB; 1.8 dB; 30 GHz; GaAs; GaAs diode switches; Ka-band applications; PIN diode; SPDT switch; insertion loss; ion-implantation technique; lateral P-SI-N diode; monolithic IC; single P-SI-N structure; Communication switching; Gallium arsenide; Gold alloys; Implants; Insertion loss; Insulation; P-i-n diodes; Resists; Semiconductor diodes; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 1999. 21st Annual
Conference_Location
Monterey, CA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5585-7
Type
conf
DOI
10.1109/GAAS.1999.803772
Filename
803772
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