Title :
Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow
Author :
Kubota, M. ; Harafuji, K. ; Misaka, A. ; Yamano, A. ; Nakagawa, H. ; Nomura, N.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A novel simulator for plasma processing has been developed and applied to analyze the gate oxide damage during parallel plate oxygen RIE (reactive ion etching) (13.56 MHz). The TDDB (time-dependent dielectric breakdown) and flat band voltage shift of a poly-silicon gate nMOS capacitor were experimentally measured. The results suggest a new mechanism where a large electron current flow near the wafer edge induces the damage.<>
Keywords :
electric breakdown of solids; metal-insulator-semiconductor devices; semiconductor process modelling; sputter etching; 13.56 MHz; O/sub 2/; Si-SiO/sub 2/; TDDB; electron current flow; flat band voltage shift; gate oxide breakdown mechanism; gate oxide damage; parallel plate O/sub 2/ RIE; plasma processing; polysilicon gate nMOS capacitor; reactive ion etching; simulator; time-dependent dielectric breakdown; Analytical models; Breakdown voltage; Dielectric breakdown; Electric breakdown; Etching; MOS devices; Plasma applications; Plasma materials processing; Plasma measurements; Plasma simulation;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235282
