Title :
Low-noise, high-speed avalanche photodiodes
Author :
Campbell, Joe C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Describes materials and structural modifications to the thin multiplication regions that have yielded ultra low multiplication noise. In the low gain regime, these APDs have achieved excess noise factors lower than that of Si APDs. Very high gain-bandwidth products can be achieved by proper design of the multiplication region and the use of a waveguide structure.
Keywords :
avalanche photodiodes; impact ionisation; semiconductor device noise; APDs; excess noise factors; gain-bandwidth products; high-speed avalanche photodiodes; low gain regime; multiplication regions; structural modifications; ultra low multiplication noise; waveguide structure; Avalanche photodiodes; Gallium arsenide; Heterojunctions; Impact ionization; Indium gallium arsenide; Indium phosphide; Microelectronics; Noise reduction; Power engineering and energy; Semiconductor device noise;
Conference_Titel :
Device Research Conference, 2001
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-7014-7
DOI :
10.1109/DRC.2001.937851
