Title :
Electrical profiling of collector and base doping concentration
Author :
Chiu, T.-Y. ; Sung, J.J. ; Pavlo, J. ; Liu, T.-Y.M. ; Lee, K.F. ; Possanza, W. ; Moerschel, K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A method for electrically profiling the collector carrier density of a bipolar device is reported. The base doping profile is also obtainable. This measurement technique is also useful in monitoring epi thickness and base width. The measurements are simple, economical, and accurate.<>
Keywords :
bipolar transistors; capacitance measurement; carrier density; doping profiles; semiconductor device testing; base doping profile; base width; bipolar device; collector carrier density; doping concentration; electrical profiling; emitter to collector capacitance; epi thickness; Capacitance measurement; Charge carrier density; Doping profiles; Electrodes; Monitoring; Noise measurement; Parasitic capacitance; Rough surfaces; Surface roughness; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235292
