DocumentCode
3302437
Title
Chaos generator MMIC´s using resonant tunneling diodes
Author
Maezawa, K. ; Kawano, Y. ; Ohno, Y. ; Kishimoto, S. ; Mizutani, T.
Author_Institution
Graduate Sch. of Eng., Nagoya Univ., Japan
fYear
2001
fDate
25-27 June 2001
Firstpage
55
Lastpage
56
Abstract
Recently, applications of chaos, which is often observed in nonlinear circuits, have been studied intensively in the field of information processing and communication systems. Using resonant tunneling devices to make such nonlinear circuits has many advantages, for example, simplicity in circuit, high operation frequency and low power consumption. In this paper, we report the demonstration of high-frequency operations of the chaos generator microwave monolithic ICs consisting of an RTD and a high electron mobility transistor (HEMT).
Keywords
HEMT integrated circuits; MMIC; chaos generators; resonant tunnelling diodes; chaos generator MMIC; high electron mobility transistor; high-frequency operation; nonlinear circuit; resonant tunneling diode; Chaos; Chaotic communication; Diodes; Energy consumption; Frequency; HEMTs; Information processing; Nonlinear circuits; RLC circuits; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2001
Conference_Location
Notre Dame, IN, USA
Print_ISBN
0-7803-7014-7
Type
conf
DOI
10.1109/DRC.2001.937869
Filename
937869
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