A quantum dot FET-a future playground of quantum state manipulation

Author

Yoh, K. ; Kazama, H. ; Katano, Y.

Author_Institution

Res. Center for Interface Quantum Electron., Hokkaido Univ., Japan

fYear

2001

fDate

25-27 June 2001

Firstpage

93

Lastpage

94

Abstract

We report a novel functional transistor which yields drain current peaks according to a dot-confined energy-states (shell structures) by scanning gate voltage and/or external magnetic field by controlling the interplay between charging energy and the dot confined energy states. Remarkable result is that the average "single-dot" energy states were resolved despite the inhomogeneous variations of the quantum dot ensemble. It would lead to an FET which manage to control quantum states in a "average quantum dot" state by normal FET operation of gate and drain voltage control.

Keywords

III-V semiconductors; electron spin polarisation; field effect transistors; indium compounds; quantum computing; quantum interference phenomena; semiconductor quantum dots; single electron transistors; 170 A; 25 A; InAs; delta-doped channel transistor structure; dot-confined energy-states; drain current peaks; energy band diagram; functional transistor; quantum dot FET; quantum state manipulation; self-assembled dots; semiconductor-based qubit; single-dot energy states; solid-state quantum computer; spin-polarized electron injection; threshold voltage shift; Electrons; Energy resolution; Energy states; FETs; Intrusion detection; Magnetic fields; Quantum computing; Quantum dots; US Department of Transportation; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937888

Filename

937888