Title :
Low voltage, high speed RF switch with high switching capacitance ratio
Author :
Pakula, Lukasz S. ; French, Patrick J. ; Yang, Heng
Author_Institution :
Dept. of Microelectron. & Computed Eng., Delft Univ. of Technol.
fDate :
Oct. 30 2005-Nov. 3 2005
Abstract :
In this paper the principle, design and fabrication process of low-voltage, high speed RF switch is presented. The aluminium as the electrodes and the PECVD silicon carbide were selected as electrodes and shield materials, respectively. The operating voltage as low as 0.8 volt and high switching capacitance ratio of 180 is reported
Keywords :
aluminium; chemical vapour deposition; electrodes; low-power electronics; microwave switches; silicon compounds; wide band gap semiconductors; Al; PECVD silicon carbide; SiC; radiofrequency switch; shield materials; switching capacitance ratio; Capacitance; Damping; Elastic recovery; Electrodes; Electrostatics; Energy consumption; Low voltage; Optical switches; Radio frequency; Springs;
Conference_Titel :
Sensors, 2005 IEEE
Conference_Location :
Irvine, CA
Print_ISBN :
0-7803-9056-3
DOI :
10.1109/ICSENS.2005.1597740
