DocumentCode :
3302845
Title :
Commercial CMOS fabricated integrated dynamic thermal scene simulator
Author :
Parameswaran, M. ; Chung, R. ; Gaitan, M. ; Johnson, R.B. ; Syrzycki, Marek
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fYear :
1991
fDate :
8-11 Dec. 1991
Firstpage :
753
Lastpage :
756
Abstract :
The authors report a prototype integrated dynamic thermal scene simulator chip, consisting of a 2*2 array of integrated thermal pixels. The chips were fabricated using commercial CMOS processes. The micromachining process needed to create the thermally isolated structure is introduced as a maskless postprocessing step. The thermal pixel and the control electronics are designed as a module for an easy implementation of the array. Test results indicate that the pixels have a thermal time constant of 5 ms and are capable of producing an infrared output of apparent radiometric temperatures in excess of 600 degrees C and color temperatures of at least 500 degrees C. The control electronics is capable of switching within 900 ns, enabling the addressing of multiple pixels within the 200 Hz frame time required for a typical dynamic thermal scene simulation.<>
Keywords :
CMOS integrated circuits; display devices; infrared sources; micromechanical devices; simulation; test equipment; 2*2 array; 5 ms; 500 C; 600 C; 900 ns; IR displays; addressing of multiple pixels; color temperatures; commercial CMOS processes; control electronics; infrared output; integrated dynamic thermal scene simulator chip; integrated thermal pixels; maskless postprocessing step; micromachining process; prototype; radiometric temperatures; thermal scene generator; thermal time constant; thermally isolated structure; CMOS process; CMOS technology; Circuit simulation; Electronic equipment testing; Fabrication; Infrared heating; Integrated circuit technology; Layout; Micromachining; Temperature control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0243-5
Type :
conf
DOI :
10.1109/IEDM.1991.235314
Filename :
235314
Link To Document :
بازگشت