Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

Author

Otsuji, T. ; Kanamaru, Y. ; Kitamura, H. ; Nakae, S.

Author_Institution

Dept. of Control Sci. & Eng., Kyushu Inst. of Technol., Fukuoka, Japan

fYear

2001

fDate

25-27 June 2001

Firstpage

97

Lastpage

98

Abstract

The resonance frequency can be externally controlled which offers tunability of oscillation. The THz plasma resonant phenomena, however, has only been measured by illuminating a AlGaAs/GaAs HEMT with a single 2.5-THz gas laser source and there has been no experimental reports on the resonance frequency dependence. This paper demonstrates the first experiment on GaAs MESFETs.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; laser beam effects; microwave photonics; submillimetre wave oscillators; submillimetre wave transistors; 2.5 THz; 80 nm; GaAs; III-V semiconductors; MESFET; long-wavelength CW laser sources; oscillation tunability; photomixing; plasma resonant phenomena; resonance frequency; terahertz plasma-wave excitation; Frequency measurement; Gallium arsenide; Gas lasers; HEMTs; Laser excitation; MESFETs; Plasma measurements; Plasma sources; Resonance; Resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2001

Conference_Location

Notre Dame, IN, USA

Print_ISBN

0-7803-7014-7

Type

conf

DOI

10.1109/DRC.2001.937890

Filename

937890