Title :
Analysis of p/sup +/ poly Si double-gate thin-film SOI MOSFETs
Author :
Tanaka, T. ; Horie, H. ; Ando, S. ; Hijiya, S.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
The authors have fabricated planar p/sup +/ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices.<>
Keywords :
insulated gate field effect transistors; semiconductor-insulator boundaries; wafer bonding; SOI-MOSFET; analytical model; charge injection; double-gate SOI MOSFET; electrical characteristics; fully flat potential; polycrystalline Si; thin-film SOI MOSFETs; transconductance; wafer bonding; Analytical models; Electric variables; Electrodes; Fabrication; MOSFETs; Semiconductor thin films; Transconductance; Transistors; Voltage; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235330
