Title :
Monte Carlo/drift-diffusion coupling: non-equilibrium transport in deep submicron MOSFETs
Author :
Dubois, E. ; Bricout, P.H. ; Fauquembergue, R. ; Collard, D.
Author_Institution :
ISEN, CNRS, Lille, France
Abstract :
Coupling between Monte Carlo and drift-diffusion methods is investigated on deep submicron MOSFETs. For this purpose, an extended formulation of the drift-diffusion current equation which includes an additional driving force, the so-called energy-gradient field, is used. It is shown that the energy-gradient field only contributes in the drain region where nonlocal effects prevail. Another illustration of nonequilibrium transport is also provided by the thermal voltage tensor which strongly modifies the diffusion term.<>
Keywords :
Monte Carlo methods; insulated gate field effect transistors; semiconductor device models; Monte Carlo/drift-diffusion coupling; deep submicron MOSFETs; drain region; drift-diffusion current equation; energy-gradient field; nonequilibrium transport; nonlocal effects; thermal voltage tensor; Acoustic scattering; Analytical models; Anisotropic magnetoresistance; Electrons; Equations; MOSFETs; Monte Carlo methods; Phonons; Tensile stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235342
